APM4034NU データシートの表示（PDF） - Anpec Electronics
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APM4034NU Datasheet PDF : 10 Pages
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APM4034NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA = 25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
TC=25°C
IDP
300µs Pulse Drain Current Tested
TC=25°C
TC=100°C
ID
Continuous Drain Current
TC=25°C
TC=100°C
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
Notes：
* Current limited by bond wire.
Rating
40
±20
150
-55 to 150
20*
40
20
20*
10
50
20
2.5
50
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
Symbol
Parameter
Test Condition
APM4034NU
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VGS=0V, IDS=250µA
VDS=32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=10A
VGS=5V, IDS=5A
40
1
30
1.5 2
3
±100
29 37
45 62
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=2A, VGS=0V
ISD=10A, dISD/dt =100A/µs
0.8 1.1
16
8
Unit
V
µA
V
nA
mΩ
V
ns
nC
Copyright © ANPEC Electronics Corp.
2
Rev. A.1 - Mar., 2007
www.anpec.com.tw
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