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HM-65162/883 データシートの表示(PDF) - Intersil

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HM-65162/883 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HM-65162/883
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
Typical Derating Factor . . . . . . . . . .1.5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
48θoJCA/W
8oθCJC/W
CLCC Package . . . . . . . . . . . . . . . . . . 66oC/W
12oC/W
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26000 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V
Chip Enable High/Low Time . . . . . . . . . . . . . . . . . . . . . . . 40ns (Min)
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.2V to VCC
Data Retention Supply Voltage . . . . . . . . . . . . . . . . . . . 2.0V to 4.5V
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max
TABLE 1. 65162/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
High Level Out-
put Voltage
Low Level Output
Voltage
High Impedance
Output Leakage
Current
Input Leakage
Current
Standby Supply
Current
Standby Supply
Current
Operating Supply
Current
Enable Supply
Current
Data Retention
Supply Current
Functional Test
SYMBOL
VOH1
VOL
IIOZ
II
ICCSB1
ICCSB
ICCOP
ICCEN
ICCDR
FT
(NOTE 1)
CONDITIONS
VCC = 4.5V, IO = -1.0mA
VCC = 4.5V, IO = 4.0mA
VCC = 5.5V, G = 2.2V, or
E = 2.2V, VI/O = GND or VCC
VCC = 5.5V,
VI = GND or VCC
HM-65162B/883, IO = 0mA,
VCC = 5.5V, E = VCC -0.3V
HM-65162/883, IO = 0mA,
VCC = 5.5V, E = VCC - 0.3V
HM-65162C/883, IO = 0mA,
VCC = 5.5V, E = VCC - 0.3V
VCC = 5.5V, IO = 0mA,
E = 2.2V
VCC = 5.5V, G = 5.5V,
(Note 2), f = 1MHz, E = 0.8V
VCC = 5.5V, IO = 0mA,
E = 0.8V
HM-65162B/883, IO = 0mA,
VCC = 2.0V, E = VCC - 0.3V
HM-65162/883, IO = 0mA,
VCC = 2.0V, E = VCC - 0.3V
HM-65162C/883, IO = 0mA,
VCC = 2.0V, E = VCC - 0.3V
VCC = 4.5V (Note 3)
GROUP A
SUBGROUPS
1, 2, 3
TEMPERATURE
-55oC TA +125oC
LIMITS
MIN MAX
2.4
-
UNITS
V
1, 2, 3
-55oC TA +125oC
-
0.4
V
1, 2, 3
-55oC TA +125oC -1.0 1.0
µA
1, 2, 3
-55oC TA +125oC -1.0 1.0
µA
1, 2, 3
-55oC TA +125oC
-
50
µA
1, 2, 3
-55oC TA +125oC
-
100 µA
1, 2, 3
-55oC TA +125oC
-
900 µA
1, 2, 3
-55oC TA +125oC
-
8
mA
1, 2, 3
-55oC TA +125oC
-
70
mA
1, 2, 3
-55oC TA +125oC
-
70
mA
1, 2, 3
-55oC TA +125oC
-
20
µA
1, 2, 3
-55oC TA +125oC
-
40
µA
1, 2, 3
-55oC TA +125oC
-
300 µA
7, 8A, 8B
-55oC TA +125oC
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Input pulse levels: 0.8V to VCC - 2.0V; Input rise and fall times: 5ns (max); Input and output timing reference level: 1.5V; Output load: 1
TTL gate equivalent, CL = 50pF (min) - for CL greater than 50pF, access time by 0.15ns per pF.
3. TAVQV = TELQV + TAVEL.
190

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