AMMC-6241 データシートの表示（PDF） - HP => Agilent Technologies
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AMMC-6241 Datasheet PDF : 8 Pages
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AMMC-6241 DC Specifications/Physical Properties [1]
Symbol Parameters and Test Conditions
Units Min. Typ. Max.
Id
Drain Supply Current (under any RF power drive and temperature) (Vd=3.0 V) mA
θch-b
Thermal Resistance[2] (Backside temperature, Tb = 25°C)
°C/W
60 80
25
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (qch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
AMMC-6241 RF Specifications [3, 4, 5]
TA= 25°C, Vd=3.0 V, Id(Q)=60 mA, Zin=Zo=50 Ω
Symbol Parameters and Test Conditions
Gain Small-signal Gain[6]
NF
Noise Figure into 50 Ω
Units Minimum
Typical
Maximum
Sigma
dB 26-35 GHz = 20 26-37 GHz = 21
1.0
35-40 GHz = 18.5 37-40 GHz = 19.5
dB
26-37 GHz = 2.7 26-37 GHz = 3.0 0.05
37-40 GHz = 3.0 37-40 GHz = 3.3
P-1dB
Output Power at 1dB Gain
dBm
+10
Compression
OIP3 Third Order Intercept Point;
dBm
+20
∆f=100MHz; Pin=-35dBm
RLin Input Return Loss[6]
dB
-13
-11
0.40
RLout Output Return Loss[6]
dB
-16
-12
0.50
Isol
Reverse Isolation[6]
dB
-40
0.50
Notes:
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency =30, 32, and 38 GHz.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more
narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.
6. As derived from measured s-parameters
USL
LSL
USL
2.6
2.7
2.8
2.9
19
20
2.8 2.9
3
3.1 3.2 3.3
Noise Figure at 32 GHz
Gain at 38 GHz
Noise Figure at 38GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
2
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