PM400HSA120_ データシートの表示（PDF） - MITSUBISHI ELECTRIC

部品番号

コンポーネント説明

一致するリスト

PM400HSA120_

USING INTELLIGENT POWER MODULES

MITSUBISHI ELECTRIC  

MITSUBISHI SEMICONDUCTORS POWER MODULES MOS

USING INTELLIGENT POWER MODULES

6.3 Area of Safe Operation for

Intelligent Power Modules

The IPMs built-in gate drive and

protection circuits protect it from

many of the operating modes that

would violate the Safe Operation

Area (SOA) of non-intelligent IGBT

modules. A conventional SOA defi-

nition that characterizes all pos-

sible combinations of voltage, cur-

rent, and time that would cause

power device failure is not re-

quired. In order to define the SOA

for IPMs, the power device capabil-

ity and control circuit operation

must both be considered. The re-

sulting easy to use short circuit and

switching SOA definitions for Intelli-

gent Power Modules are summa-

rized

in this section.

6.3.1 Switching SOA

Switching or turn-off SOA is nor-

mally defined in terms of the maxi-

mum allowable simultaneous volt-

age and current during repetitive

turn-off switching operations. In the

case of the IPM the built-in gate

drive eliminates many of the dan-

gerous combinations of voltage

and current that are caused by im-

proper gate drive. In addition, the

maximum operating current is lim-

ited by the over current protection

circuit. Given these constraints the

switching SOA can be defined us-

ing the waveform shown in Figure

6.12. This waveform shows that the

IPM will operate safely as long as

the DC bus voltage is below the

data sheet VCC(prot) specification,

the turn-off transient voltage across

C-E terminals of each IPM switch is

maintained below the VCES specifi-

cation, Tj is less than 125°C, and

the control power supply voltage is

between 13.5V and 16.5V. In this

waveform IOC is the maximum cur-

rent that the IPM will allow without

causing an Over Current (OC) fault

to occur. In other words, it is just

below the OC trip level. This wave-

form defines the worst case for

hard turn-off operations because

the IPM will initiate a controlled

slow shutdown for currents higher

than the OC

trip level.

6.3.2 Short Circuit SOA

The waveform in Figure 6.13 de-

picts typical short circuit operation.

The standard test condition uses a

minimum impedance short circuit

which causes the maximum short

circuit current to flow in the device.

In this test, the short circuit current

(ISC) is limited only by the device

characteristics. The IPM is guaran-

teed to survive non-repetitive short

circuit and over current conditions

as long as the initial DC bus volt-

age is less than the VCC(prot)

specification, all transient voltages

across C-E terminals of each IPM

switch are maintained less than the

VCES specification, Tj is less than

125°C, and the control supply volt-

age is between 13.5V and 16.5V.

Figure 6.12 Turn-Off Waveform

IOC

≤VCES

≤VCC(PROT)

The waveform shown depicts the

controlled slow shutdown that is

used by the IPM in order to help

minimize transient voltages.

Note:

The condition VCE ≤ VCES has to

be carefully checked for each IPM

switch. For easing the design an-

other rating is given on the data

sheets, VCC(surge), i.e., the maxi-

mum allowable switching surge

voltage applied between the P and

N terminals.

6.3.3 Active Region SOA

Like most IGBTs, the IGBTs used in

the IPM are not suitable for linear

or active region operation. Nor-

mally device capabilities in this

mode of operation are described in

terms of FBSOA (Forward Biased

Safe Operating Area). The IPM’s

internal gate drive forces the IGBT

to operate with a gate voltage of ei-

ther zero for the off state or the

control supply voltage (VD) for the

on state. The IPMs under-voltage

lock out prevents any possibility of

active or linear operation by auto-

matically turning the power device

off if VD drops to a level

that could cause desaturation of

the IGBT.

Figure 6.13 Short-Circuit

Operation

≤VCES

ISC

≤VCES

≤VCC(PROT)

toff(OC)

Sep.1998

Share Link: