PM150CVA120_ データシートの表示（PDF） - MITSUBISHI ELECTRIC

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PM150CVA120_

USING INTELLIGENT POWER MODULES

MITSUBISHI ELECTRIC  

MITSUBISHI SEMICONDUCTORS POWER MODULES MOS

USING INTELLIGENT POWER MODULES

6.1.2 Ceramic Isolation Con-

struction

Higher power IPMs are constructed

using ceramic isolation material. A

direct bond copper process in

which copper patterns are bonded

directly to the ceramic substrate

without the use of solder is used in

these modules. This substrate pro-

vides the improved thermal charac-

teristics and greater current carry-

ing capabilities that are needed in

these higher power devices. Gate

drive and control circuits are con-

tained on a separate PCB mounted

directly above the power devices.

The PCB is a multilayer construc-

tion with special shield layers for

EMI noise immunity. Figure 6.4

shows the structure of a ceramic

isolated Intelligent Power Module.

Figure 6.5 is a PM75RSA060 75 A,

600V IPM.

Figure 6.4 Ceramic Isolation Construction

MAIN

TERMINAL

EPOXY

RESIN

GUIDE

PIN

INPUT SIGNAL

TERMINAL

CASE

BASE

PLATE

SILICON GEL

SILICON CHIP

DBC PLATE

INTERCONNECT

ELECTRODE TERMINAL

ALUMINUM WIRE

CONTROL BOARD

PCB

RESISTOR

SHIELD

LAYER

SHIELD

LAYER

SIGNAL

TRACE

Figure 6.5 PM75RSA060

Sep.1998

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