PM25RSB120_ データシートの表示（PDF） - MITSUBISHI ELECTRIC

部品番号

コンポーネント説明

一致するリスト

PM25RSB120_

USING INTELLIGENT POWER MODULES

MITSUBISHI ELECTRIC  

MITSUBISHI SEMICONDUCTORS POWER MODULES MOS

USING INTELLIGENT POWER MODULES

possible by an advanced RTC

(Real Time Control) current clamp-

ing circuit that eliminates the need

for the over current protection func-

tion. In V-Series IPMs a unified

short circuit protection with a delay

to avoid unwanted operation re-

places the over current and short

circuit modes of the third genera-

tion devices.

6.1 Structure of Intelligent

Power Modules

Mitsubishi Intelligent Power Mod-

ules utilize many of the same field

proven module packaging tech-

nologies used in Mitsubishi IGBT

modules. Cost effective implemen-

tation of the built in gate drive and

protection circuits over a wide

range of current ratings was

achieved using two different pack-

aging techniques. Low power de-

vices use a multilayer epoxy isola-

tion system while medium and high

power devices use ceramic isola-

tion. These packaging technologies

are described in more detail in Sec-

tions 6.1.1 and 6.1.2. IPM are

available in four power circuit con-

figurations, single (H), dual (D), six

pack (C), and seven pack (R).

Table 6.1 indicates the power cir-

cuit of each IPM and Figure 6.1

shows the power circuit configura-

tions.

6.1.1 Multilayer Epoxy Construc-

tion

chips and gate control circuit com-

ponents are soldered directly to the

substrate eliminating the need for a

separate printed circuit board and

ceramic isolation materials. Mod-

ules constructed using this tech-

nique are easily identified by their

Figure 6.1 Power Circuit

Configuration

TYPE C

P

U

V

W

N

TYPE R

P

B

U

V

W

N

TYPE D

C1

TYPE H

C

extremely low profile packages.

This package design is ideally

suited for consumer and industrial

applications where low cost and

compact size are important.

Figure 6.2 shows a cross section

of this type of IPM package. Figure

6.3 is a PM20CSJ060 20A, 600V

IPM.

Figure 6.2 Multi-Layer Epoxy

Construction

2

3

1

4

5

6

11

7 8 9 10

1. Case

2. Epoxy Resin

3. Input Signal Terminal

4. SMT Resistor

5. Gate Control IC

6. SMT Capacitor

7. IGBT Chip

8. Free-wheel Diode Chip

9. Bond Wire

10. Copper Block

11. Baseplate with Epoxy

Based Isolation

Figure 6.3 PM20CSJ060

Low power IPM (10-50A, 600V and

10-15A, 1200V) use a multilayer

epoxy based isolation system. In

C2E1

E

this system, alternate layers of cop-

per and epoxy are used to create a

shielded printed circuit directly on

the aluminum base plate. Power

E2

Sep.1998

Share Link: