ADG918BCP データシートの表示（PDF） - Analog Devices

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ADG918BCP

Wideband, 43dB Isolation @ 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

Analog Devices 

PRELIMINARY TECHNICAL DATA

ADG918/ADG919–SPECIFICATIONS1

(VDD = +1.65 V to +2.75 V, GND = 0 V, All specifications TMIN to TMAX unless otherwise noted)

Parameter

Symbol Conditions

B Version

Min

Typ2

AC ELECTRICAL CHARACTERISTICS

Operating Frequency

Insertion Loss

S21, S12

Isolation- RF to RF1/RF2

S21, S12

Isolation - RF1 to RF2

S21, S12

Return Loss (On Channel)

S11, S22

On switching Time

Off Switching Time

1 dB Compression

Third Order Intermodulation intercept

tON

tOFF

P-1dB

IP3

DC - 100 MHz

500 MHz

900 MHz

1 MHz

100 MHz

500 MHz

1000 MHz

1 MHz

100 MHz

500 MHz

1000 MHz

DC - 100 MHz

500 MHz

1000 MHz

50% Control to 90% RF

50% Control to 10% RF

DC to 1000 MHz

900MHz, 5dBm

DC ELECTRICAL CHARACTERISTICS

Input High Voltage

Input Low Voltage

Input Leakage Current

VINH

VINH

VINL

VINL

II

VDD = 2.3 V to 2.75 V

VDD = 1.65 V to 1.95 V

VDD = 2.3 V to 2.75 V

VDD = 1.65 V to 1.95 V

0 Յ VIN Յ 2.75 V

CAPACITANCE3

RF1/RF2, RF Port On Capacitance

Control Input Capacitance

CRF ON f = 1 MHz

CIN

f = 1 MHz

POWER REQUIREMENTS

VDD

Quiescent Power Supply Current

IDD

Digital Inputs = 0 V or VDD

NOTES

1Temperature range is as follows: B Version: –40°C to +85°C.

2 Typical values are at +25°C unless otherwise stated.

3 Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

DC

0.4

0.65

1.0

100

55

43

100

55

30

26

23

5

4

20

35

1.7

0.65VCC

2

2

1.65

1

Max

Units

2

GHz

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

dB

ns

ns

dBm

dBm

V

V

0.7

V

0.35VCC V

±1

µA

pF

pF

2.75

V

5

µA

–2–

REV. PrC

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