P4C198A データシートの表示（PDF） - Performance Semiconductor

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P4C198A

ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS

Performance Semiconductor 

P4C198/198L, P4C198A/198AL

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

ICC Dynamic Operating Current*

Temperature

Range

Commercial

Industrial

Military

–10 –12 –15 –20 –25 –35 –45 Unit

180 170 160 155 150 N/A N/A mA

N/A 180 170 160 155 150 N/A mA

N/A N/A 170 160 155 150 145 mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.

198: CE = VIL, OE = VIH

198A: CE1 = VIL, CE2 = VIL. OE = VIH

DATA RETENTION CHARACTERISTICS (P4C198L/P4C198AL Military Temperature Only)

Symbol

Parameter

VDR

ICCDR

VCC for Data Retention

Data Retention Current

Test Condition

Typ.*

Max

Min

VCC=

VCC=

Unit

2.0V 3.0V 2.0V 3.0V

2.0

V

10

15 600 900 µA

tCDR

Chip Deselect to

CE ≥VCC – 0.2V,

0

ns

Data Retention Time

VIN ≥ VCC – 0.2V or

tR†

Operation Recovery Time VIN ≤ 0.2V

tRC§

ns

*TA = +25°C

§tRC = Read Cycle Time

†This parameter is guaranteed but not tested.

DATA RETENTION WAVEFORM

Document # SRAM113 REV A

Page 3 of 13

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