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ACT5830QJ182-T データシートの表示(PDF) - Active-Semi, Inc

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ACT5830QJ182-T
ACTIVE-SEMI
Active-Semi, Inc ACTIVE-SEMI
ACT5830QJ182-T Datasheet PDF : 41 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
®
ACT5830
Rev 2, 20-Jan-11
SYSTEM MANAGEMENT
ELECTRICAL CHARACTERISTICS
(VBAT = VIN1 = VIN2 = 3.6V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
BAT Operating Voltage Range
BAT UVLO Threshold
BAT Voltage Rising
BAT UVLO Hysteresis
BAT Voltage Falling
BAT UVLO Delay
BAT Rising
BAT Falling
nRST Delay
No Load BAT Supply Current
REG, LDO1, LDO2 and LDO3 Enabled with
No Load and CHGR Disabled
REG, All LDOs Enabled and CHGR Disabled.
REF Output Voltage
Reference PSRR
CREF = 0.01µF, f = 1kHz
ODx Output On Resistance
100mA Sink Current
ODx Output Leakage Current
VODx = VBAT
Logic High Input Voltage
Logic Low Input Voltage
Logic Low Output Voltage
nON, nRST, ISINK = 5mA
Logic Leakage Current
VnON = VnRST = VCHG_IN = 4.2V
Thermal Shutdown Temperature Temperature rising
Thermal Shutdown Hysteresis Temperature falling
MIN
2.6
2.2
1.24
1.4
TYP
2.35
80
0.1
5
65
MAX UNIT
5.5
V
2.5
V
mV
ms
ms
0.26 0.5 mA
0.45 0.75 mA
1.25 1.26 V
75
dB
4
10 µA
V
0.4
V
0.3
V
1
µA
160
°C
20
°C
Innovative PowerTM
-8-
ActivePMUTM is a trademark of Active-Semi.
I2CTM is a trademark of NXP.
www.active-semi.com
Copyright © 2010 Active-Semi, Inc.

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