7MBR75VN120-50 データシートの表示（PDF） - Fuji Electric
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7MBR75VN120-50 Datasheet PDF : 8 Pages
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7MBR75VN120-50
IGBT Modules
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
100
VGE=20V
15V
12V
75
50
10V
25
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
100
Tj=25°C
Tj=150°C
75
Tj=125°C
50
25
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
10.0
Cies
1.0
Cres
0.1
0
Coes
10
20
30
Collector - Emitter voltage: VCE [V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
100
VGE=20V
15V
75
12V
50
10V
25
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
8
6
4
2
Ic=100A
Ic=50A
Ic=25A
0
5
10
15
20
25
Gate - Emitter voltage: VGE [V]
[ Brake ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=75A, Tj= 25°C
VGE
VCE
0
100 200 300 400 500 600
Gate charge: Qg [nC]
6
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