7413 データシートの表示（PDF） - International Rectifier
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7413 Datasheet PDF : 9 Pages
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IRF7413QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
30 ––– –––
––– 0.034 –––
V
V/°C
RDS(on)
––– ––– 0.011
Static Drain-to-Source On-Resistance
––– ––– 0.018
Ω
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
1.0 –––
3.0
V
10 ––– –––
S
––– –––
12
IDSS
Drain-to-Source Leakage Current
––– –––
25
µA
Gate-to-Source Forward Leakage
––– ––– -100
IGSS
Gate-to-Source Reverse Leakage
––– ––– 100
nA
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 52
79
––– 6.1
9.2
––– 16
23
nC
1.2 –––
3.7
––– 8.6
–––
––– 50
–––
––– 52
–––
ns
––– 46
–––
––– 1800 –––
––– 680 –––
pF
––– 240 –––
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
f VGS = 10V, ID = 7.3A
f VGS = 4.5V, ID = 3.7A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 3.7A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
ID = 7.3A
f VDS = 24V
VGS = 10V, See Fig. 6 and 9
VDD = 15V
ID = 7.3A
f RG = 6.2 Ω
RG = 2.0Ω, See Fig. 10
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
à Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ.
––– –––
––– –––
––– –––
––– 74
––– 200
Max.
3.1
58
1.0
110
300
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
e p-n junction diode.
TJ = 25°C, IS = 7.3A, VGS = 0V
e TJ = 25°C, IF = 7.3A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board
Rθ is measured at TJ approximately 90°C
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