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6N60Z データシートの表示(PDF) - Unisonic Technologies

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6N60Z
UTC
Unisonic Technologies UTC
6N60Z Datasheet PDF : 6 Pages
1 2 3 4 5 6
6N60Z
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
600
V
±30
V
6.2
A
6.2
A
24.8
A
440
mJ
13
mJ
4.5
ns
Power Dissipation
PD
40
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 , Starting TJ = 25°C
4. ISD 6.2A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
3.2
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10 μA
Forward
Gate- Source Leakage Current
Reverse
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
5 μA
-5 μA
0.53
V/°C
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 3.1A
1.0 1.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V,
f=1.0 MHz
770 1000 pF
95 120 pF
10 13 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
20 50 ns
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=300V, ID =6.2A,
RG =25(Note 1, 2)
70 150 ns
40 90 ns
Turn-Off Fall Time
tF
45 100 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=480V, ID=6.2A,
VGS=10 V (Note 1, 2)
20 25 nC
4.9
nC
9.4
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-741.a

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