50MT060WHTA データシートの表示（PDF） - International Rectifier

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50MT060WHTA

HALF-BRIDGE IGBT MTP Warp Speed IGBT

International Rectifier 

50MT060WHA, 50MT060WHTA

Bulletin I27190 02/05

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters

Min Typ Max Units Test Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 600

V VGE = 0V, IC = 500µA

VCE(on) Collector-to-Emitter Voltage

2.3 3.15

VGE = 15V, IC = 50A

2.5 3.2

VGE = 15V, IC = 100A

1.72 2.17

VGE = 15V, IC = 50A, TJ = 150°C

VGE(th) Gate Threshold Voltage

3

6

IC = 0.5mA

ICES

Collector-to-Emiter Leaking

0.4 mA VGE = 0V, VCE = 600V

Current

10

VGE = 0V, VCE = 600V, TJ = 150°C

VFM

Diode Forward Voltage Drop

1.58 1.80 V IF = 50A, VGE = 0V

1.49 1.68

IF = 50A, VGE = 0V, TJ = 150°C

1.9 2.17

IF = 100A, VGE = 0V, TJ = 25°C

IGES

Gate-to-Emitter Leakage Current

± 250 nA VGE = ± 20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters

Min Typ Max Units Test Conditions

Qg

Qge

Qgc

Eon

Eoff

Ets

Eon

Eoff

Ets

Cies

Coes

Cres

trr

Irr

Qrr

trr

Irr

Qrr

Total Gate Charge (turn-on)

Gate-Emitter Charge (turn-on)

Gate-Collector Charge (turn-on)

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak Reverse Current

Diode Recovery Charge

Diode Reverse Recovery Time

Diode Peak Reverse Current

Diode Recovery Charge

331 385 nC IC = 52A

44 52

VCC = 400V

133 176

VGE = 15V

0.26

mJ Internal gate resistors (see Electrical Diagram)

1.2

1.46

IC = 50A, VCC = 480V, VGE = 15V, L = 200µH

Energy losses include tail and diode reverse

recovery

0.73

mJ Internal gate resistors (see Electrical diagram)

1.66

2.39

IC = 50A, VCC = 480V, VGE = 15V, L = 200µH

Energy losses include tail and diode reverse

7100

510

140

recovery, TJ = 150°C

pF VGE = 0V

VCC = 30V

f = 1.0 MHz

82 97

8.3 10.6

ns VCC = 200V, IC = 50A

A di/dt = 200A/µs

340 514 nC

137 153

12.7 14.8

ns VCC = 200V, IC = 50A

A di/dt = 200A/µs

870 1132 nC TJ = 125°C

Thermistor Specifications (50MT060WHTA only)

Parameters

Min Typ Max Units Test Conditions

R0 (1)

β (1) (2)

Resistance

Sensitivity index of the thermistor

material

(1) T0,T1 are thermistor's temperatures

2

30

kΩ T0 = 25°C

4000

K T0 = 25°C

T1 = 85°C

[ ( )] (2)

R0

R1

= exp

β

1

T0

1

T1

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