2SK4033 データシートの表示（PDF） - Toshiba

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2SK4033

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristic

Gate leakage current

Drain cutoff current

Drain−source breakdown

voltage

Gate threshold voltage

Drain−source ON-resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Symbol

Test Condition

IGSS

IDSS

VGS = ±16 V, VDS = 0 V

VDS = 60 V, VGS = 0 V

V (BR) DSS ID = 10 mA, VGS = 0 V

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VDS = 10 V, ID = 1 mA

VGS = 4 V, ID = 2.5 A

VGS = 10 V, ID = 2.5 A

VDS = 10 V, ID = 2.5 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

tr

2SK4033

Min Typ. Max Unit

—

—

±10

μA

—

— 100 μA

60

—

—

V

1.3

—

2.5

V

— 0.09 0.15

Ω

— 0.07 0.10

3.0 6.0

—

S

— 730 —

—

60

—

pF

—

95

—

—

10

—

Turn−on time

ton

Switching time

Fall time

tf

—

20

—

ns

—

4

—

Turn−off time

Total gate charge (gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“Miller”) charge

toff

Qg

Qgs

VDD ≈ 48 V, VGS = 10 V, ID = 5 A

Qgd

—

35

—

—

15

—

—

11

—

nC

—

4

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 5 A, VGS = 0 V

IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs

Min Typ. Max Unit

—

—

5

A

—

—

20

A

—

—

−1.7

V

—

34

—

ns

—

28

—

μC

Marking

K4033

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-20

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