2SK4020 データシートの表示（PDF） - Toshiba

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2SK4020

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Gate leakage current

Drain cutoff current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON-resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = 200 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 2.5 A

VDS = 10 V, ID = 2.5 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

2SK4020

Min Typ. Max Unit

—

—

±10

μA

—

—

100

μA

200

—

—

V

1.5

—

3.5

V

— 0.56 0.8

Ω

2.0 4.5

—

S

— 440 —

—

35

—

pF

— 120 —

—

15

—

Turn-on time

Switching time

Fall time

Turn-off time

Total gate charge (gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“Miller”) Charge

ton

50Ω

Ω—

20

—

ns

tf

—

15

—

≈

toff

≤

μ

—

60

—

Qg

Qgs

VDD ≈ 100 V, VGS = 10 V, ID = 5 A

Qgd

—

10

—

—

6

—

nC

—

4

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

IDR

IDRP

VDSF

trr

Qrr

—

—

—

5

A

—

—

—

20

A

IDR = 5 A, VGS = 0 V

—

—

−2.0

V

— 150 —

ns

IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / μs

— 0.45 —

μC

Marking

K4020

Part No. (or abbreviation code)

Lot No.

Note 4

Note 4: A line under a Lot No. identifies the indication of product

Labels.

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

2

2009-09-29

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