2SJ542-E データシートの表示（PDF） - Renesas Electronics

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2SJ542-E

Silicon P Channel MOS FET

Renesas Electronics 

2SJ542

Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS (on) = 0.050 Ω typ.

• Low drive current.

• 4 V gate drive devices.

• High speed switching.

Outline

RENESAS Package code: PRSS0004AC-A

(Package name: TO-220AB)

D

123

G

S

REJ03G0889-0400

(Previous: ADE-208-591B)

Rev.4.00

Sep 07, 2005

1. Gate

2. Drain (Flange)

3. Source

Rev.4.00 Sep 07, 2005 page 1 of 7

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