J505S データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

一致するリスト

J505S

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ505(L), 2SJ505(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I *1

D(pulse)

I DR

I AP * 3

EAR* 3

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Ta = 25°C, Rg ≥ 50 Ω, L=100µH

Ratings

Unit

–60

V

±20

V

–50

A

–200

A

–50

A

–50

A

214

mJ

75

W

150

°C

–55 to +150

°C

2

Share Link: