2SJ350
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
–120
V
±20
V
–6
A
–12
A
–6
A
20
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –120
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
–1.0
—
—
Forward transfer admittance |yfs|
3.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note: 1. Pulse test
Typ
—
—
—
—
—
0.5
0.7
5.0
900
265
65
11
45
170
80
–1.2
240
Max Unit
—
V
—
V
±10 µA
–250 µA
–2.0 V
0.7
Ω
0.9
Ω
—
S
—
pF
—
pF
—
pF
—
ns
—
ns
—
ns
—
ns
—
V
—
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –100 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –4 A, VGS = –10 V*1
ID = –4 A, VGS = –4 V*1
ID = –4 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –4 A, VGS = –10 V,
RL = 7.5 Ω
IF = –6 A, VGS = 0
IF = –6 A, VGS = 0,
diF/dt = 50 A/µs
2