2SJ186 データシートの表示（PDF） - Renesas Electronics
部品番号
コンポーネント説明
一致するリスト
2SJ186 Datasheet PDF : 9 Pages
| |||
2SJ186
Main Characteristics
Power vs. Temperature Derating
1.2
0.8
0.4
0
0
50
100
150
Case Temperature Tc (°C)
Typical Output Characteristics
–1.0
–10 V
–0.8
–8 V
Pulse Test
–6 V
–0.6
–5 V
–0.4
–0.2
VGS = –4 V
0
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
Pulse Test
–16
–12
–1 A
–8
–0.5 A
–4
ID = –0.2 A
0
0
–4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–10
–1
–0.1
–0.01
10 µs
OthpisearDarCetioaOnPpiseWirna=tio1n0(mT1cs1=m(012s0s5h°µCost))
limited by RDS (on)
Ta = 25°C
–0.001
–1 –3 –10 –30 –100 –300 –1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–1.0
–25°C
25°C
–0.8
Tc = 75°C
–0.6
–0.4
–0.2
0
0
VDS = –20 V
Pulse Test
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
VGS = –10 V
–15 V
5
2
1
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current ID (A)
Share Link: 