2SD917 データシートの表示（PDF） - SavantIC Semiconductor
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2SD917 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD917
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A; IB=0.5A
VCE=330V; VBE=0
Ta=100
VEB=6V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=4V
hFE -2
DC current gain
tf
Fall time
IC=5A ; VCE=4V
IC=5A
IB1=0.8A,VEB=-5V,RB=0.5?
MIN TYP. MAX UNIT
200
V
330
V
1.0
V
1.2
V
1
15
mA
1
mA
120
240
15
0.75
µs
2
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