2SD468-B-T9N-K データシートの表示（PDF） - Unisonic Technologies

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2SD468-B-T9N-K

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SD468

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

25

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

1

A

Collector Peak Current

ICP

1.5

A

Collector Power Dissipation

Junction Temperature

Storage Temperature

PC

0.9

W

TJ

+150

℃

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

DC Current Transfer Ratio

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Gain Bandwidth Product

Collector Output Capacitance

Note: Pulse test

SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

BVCBO Ic=10µA, IE=0

25

V

BVCEO Ic=1mA, RBE=∞

20

V

BVEBO IE=10µA, IC=0

5

V

ICBO VCB=20V, IE=0

1

µA

hFE VCE=2V, Ic=0.5A (Note)

85

240

VCE(SAT) Ic=0.8A, IB=0.08A (Note)

0.2 0.5

V

VBE VCE=2V, Ic=0.5A (Note)

0.79

1

V

fT

VCE=2V, Ic=0.5A (Note)

190

MHz

Cob VCB=10V, IE=0, f=1MHz

22

pF

„ CLASSIFICATION OF hFE

RANK

RANGE

B

85 - 170

C

120 - 240

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R211-003.B

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