2SC5562 データシートの表示（PDF） - Toshiba
部品番号
コンポーネント説明
一致するリスト
2SC5562 Datasheet PDF : 3 Pages
| |||
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5562
Switching Regulator and High-Voltage Switching
Applications
DC-DC Converter Applications
2SC5562
Unit: mm
• Excellent switching times: tr = 0.7 µs (max)
tf = 0.5 µs (max), (IC = 0.3 A)
• High breakdown voltage: VCEO = 800 V
• High-speed DC-DC converter applications
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
Unit
900
V
800
V
7
V
0.8
A
1.5
0.4
A
1.3
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE(1)
hFE(2)
VCE (sat)
VBE (sat)
VCB = 720 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.08 A
IC = 0.3 A, IB = 0.06 A
IC = 0.3 A, IB = 0.06 A
Min Typ. Max Unit
―
― 100 µA
―
―
1
mA
900 ―
―
V
800 ―
―
V
10
―
―
―
15
―
60
―
―
1.0
V
―
―
1.2
V
Rise time
Switching time Storage time
Fall time
tr
Output
―
―
0.7
20 µs Input IB1
tstg
IB2
―
―
4.5
µs
VCC ≈ 360 V
tf
IB1 = 0.06 A, IB2 = −0.12 A,
Duty cycle ≤ 1%
―
―
0.5
1
2004-07-26
Share Link: 