C5305 データシートの表示（PDF） - SANYO -> Panasonic

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C5305

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

Ordering number:EN5884

Features

· High breakdown voltage (VCBO=1200V).

· High reliability (Adoption of HVP process).

· Adoption of MBIT process.

NPN Triple Diffused Planar Silicon Transistor

2SC5305

Inverter Lighting Applications

Package Dimensions

unit:mm

2079B

[2SC5305]

10.0

4.5

2.8

3.2

0.9

1.2

0.7

0.75

1 23

2.55

2.55

1:Base

2:Collector

3:Emitter

SANYO:TO-220FI (LS)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (pulse)

Collector Dissipation

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

Junction Temperature

Tj

Storage Temperature

Tstg

Tc=25˚C

Conditions

Electrical Characteristics at Ta=25˚C

Parameter

Symbol

Conditons

Collector Cutoff Current

Collector Cutoff Current

Collector Saturation Voltage

Emitter Cutoff Current

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

DC Current Gain

Storage Time

Fall Time

ICBO

ICES

VCEO(sus)

IEBO

VCE(sat)

VBE(sat)

hFE1

hFE2

tstg

tf

VCB=600V, IE=0

VCE=1200V, RBE=0

IC=100mA, IB=0

VEB=9V, IC=0

IC=3.0A, IB=0.6A

IC=3.0A, IB=0.6A

VCE=5V, IC=0.3A

VCE=5V, IC=2.5A

IC=3.5A, IB1=0.6A, IB2=–1.2A

IC=3.5A, IB1=0.6A, IB2=–1.2A

Ratings

Unit

1200 V

600 V

9V

6A

12 A

2W

35 W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min typ max

10 µA

1.0 mA

600

V

1.0 mA

1.0 V

1.5 V

30

40

50

10

2.5 µs

0.15 µs

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

61598TS (KOTO) TA-1239 No.5884-1/3

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