C4908 データシートの表示（PDF） - Inchange Semiconductor

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C4908

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=0.7A ;IB=0.14A

VBEsat Base-emitter saturation voltage

IC=0.7A ;IB=0.14A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=0.7A ; VCE=4V

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

fT

Transition frequency

IE=-0.3A ; VCE=12V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=0.7A; IB1=0.1A

IB2=-0.35A

VCC=250V ,RL=357Ω

Product Specification

2SC4908

MIN TYP. MAX UNIT

800

V

0.5

V

1.2

V

100 μA

100 μA

10

30

40

pF

6

MHz

1.0 μs

5.0 μs

1.0 μs

2

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