C4518 データシートの表示（PDF） - Quanzhou Jinmei Electronic
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C4518 Datasheet PDF : 4 Pages
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JMnic
Silicon NPN Power Transistors
Product Specification
2SC4518 2SC4518A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=1.8A; IB=0.36A
VBEsat Base-emitter saturation voltage
IC=1.8A; IB=0.36A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=1.8A ; VCE=4V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IE=-0.35A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.8A; IB1=0.27A
IB2=-0.9A
VCC=250V ,RL=139Ω
MIN TYP. MAX UNIT
550
V
0.5
V
1.2
V
100 μA
100 μA
10
25
50
pF
6
MHz
0.7
μs
4.0
μs
0.5
μs
2
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