C4509 データシートの表示（PDF） - SavantIC Semiconductor

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C4509

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC4509

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=4A; IB=0.8A

ICBO

Collector cut-off current

VCB=450V; IE=0

IEBO

Emitter cut-off current

VEB=10V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=5A;RL=30A

IB1=0.5A; IB2=-1A

Pw = 20µs; DutyB2%

MIN TYP. MAX UNIT

500

V

400

V

10

V

0.8

V

1.2

V

100

µA

100

µA

25

65

1.0

µs

2.5

µs

0.5

µs

2

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