C4370 データシートの表示（PDF） - Inchange Semiconductor
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C4370 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4370
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= 160V(Min)
·Complement to Type 2SA1659
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for high voltage applications
www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5.0
V
IC(DC)
Collector Current(DC)
1.5
A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@TC=25℃
Junction Temperature
Tstg
Storage Temperature
0.15
A
20
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn
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