2SC4227-15 データシートの表示（PDF） - Renesas Electronics

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2SC4227-15

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

Renesas Electronics 

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

Reverse Transfer Capacitance

Symbol

Test Conditions

ICBO VCB = 10 V, IE = 0 mA

IEBO VEB = 1 V, IC = 0 mA

h Note 1

FE

VCE = 3 V, IC = 7 mA

fT

VCE = 3 V, IC = 7 mA

S21e2 VCE = 3 V, IC = 7 mA, f = 1 GHz

NF VCE = 3 V, IC = 7 mA, f = 1 GHz

C Note 2

re

VCB = 3 V, IE = 0 mA, f = 1 MHz

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

R33

R33

40 to 90

R34

R34

70 to 150

R35

R35

110 to 240

2SC4227

MIN. TYP. MAX. Unit

−

−

0.8

µA

−

−

0.8

µA

40

−

240

−

4.5

7.0

–

GHz

10

12

−

dB

−

1.4

2.7

dB

−

0.45

0.9

pF

2

Data Sheet PU10451EJ01V0DS

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