2SC3679 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SC3679

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A

VBEsat Base-emitter saturation voltage

IC=2A ;IB=0.4A

ICBO

Collector cut-off current

VCB=800V ;IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=2A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=12V

COB

Collector output capacitance

f=1MHz;VCB=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=2.0A

IB1=0.3A ,IB2=-1A

VCC=250V, RL=125Ω

Product Specification

2SC3679

MIN TYP. MAX UNIT

800

V

0.5

V

1.2

V

0.1

mA

0.1

mA

10

30

6

MHz

75

pF

1.0

μs

5.0

μs

1.0

μs

2

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