C3158 データシートの表示（PDF） - Quanzhou Jinmei Electronic

部品番号

コンポーネント説明

一致するリスト

C3158

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A

VBEsat Base-emitter saturation voltage

IC=3A; IB=0.6A

ICBO

Collector cut-off current

VCB=400V ;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=4A ; VCE=5V

Product Specification

2SC3158

MIN TYP. MAX UNIT

400

V

500

V

7

V

1.0

V

1.2

V

10

μA

10

μA

20

80

10

2

Share Link: