C3158 データシートの表示（PDF） - Inchange Semiconductor

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C3158

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3158

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

400

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

500

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A

1.0

V

VBEsat Base-emitter saturation voltage

IC=3A; IB=0.6A

1.2

V

ICBO

Collector cut-off current

VCB=400V ;IE=0

10

μA

IEBO

Emitter cut-off current

固IN电C半H导AN体GE SEMICONDUCTOR hFE-1

DC current gain

hFE-2

DC current gain

VEB=5V; IC=0

IC=1A ; VCE=5V

IC=4A ; VCE=5V

10

20

80

10

μA

2

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