C2535 データシートの表示（PDF） - SavantIC Semiconductor
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C2535 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
VCB=400V ;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=5V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC=200V;
IB1=-IB2=0.3A;RL=68>
Duty cycle@1%
Product Specification
2SC2535
MIN TYP. MAX UNIT
400
V
500
V
1.0
V
1.5
V
100
µA
1
mA
10
1.0
µs
2.5
µs
1.0
µs
2
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