C2534 データシートの表示（PDF） - Inchange Semiconductor

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C2534

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC2534

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

400

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

500

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

6

V

VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA

1.0

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IC=0.5A; IB=50mA

VCB=400V ;IE=0

1.5

V

100 μA

IEBO

Emitter cut-off current

VEB=6V; IC=0

1

mA

hFE-1

DC current gain

IC=0.1A ; VCE=5V

20

固IN电C半H导AN体GE SEMICONDUCTOR hFE-2

DC current gain

Switching times

tr

Rise time

tstg

Storage time

IC=0.5A ; VCE=5V

20

VCC=200V;

IB1=-IB2=50mA;RL=400Ω

Duty cycle≤1%

1.0 μs

2.5 μs

tf

Fall time

1.0 μs

2

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