2SC2507 データシートの表示（PDF） - Inchange Semiconductor
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2SC2507 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2507
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
ICEO
Collector Cutoff Current
VCE= 320V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 10A; VCE= 2V
hFE-2
DC Current Gain
IC= 20A; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 10A, IB1= -IB2= 2A
RL= 3Ω; VBB2= 4V
MIN TYP. MAX UNIT
400
V
0.7
V
1.5
V
100 μA
100 μA
1.0 mA
15
8
20
MHz
1.0 μs
3.0 μs
0.7 μs
isc Website：www.iscsemi.cn
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