C1419 データシートの表示（PDF） - Inchange Semiconductor

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C1419

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A

VBEsat Base-emitter saturation voltage

IC=1A; IB=0.1A

ICBO

Collector cut-off current

VCB=50V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=10V

Product Specification

2SC1419

MIN TYP. MAX UNIT

50

V

50

V

5

V

1.0

V

1.5

V

100 μA

100 μA

35

320

5

MHz

2

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