C1368 データシートの表示（PDF） - Inchange Semiconductor

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C1368

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=50μA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50μA; IB=0

VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A

ICBO

Collector cut-off current

VCB=25V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=2V

fT

Transition frequency

IC=0.5A ; VCE=5V

Product Specification

2SC1368

MIN TYP. MAX UNIT

25

V

25

V

5

V

0.8

V

1.0 μA

1.0 μA

60

320

180

MHz

2

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