2SA837 データシートの表示（PDF） - Inchange Semiconductor

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2SA837

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A

ICBO

Collector cut-off current

VCB=-90V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-4V

COB

Collector output capacitance

IE=0; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-1A ; VCE=-10V

Product Specification

2SA837

MIN TYP. MAX UNIT

-90

V

-90

V

-5

V

-1.5

V

-0.1 mA

-0.1 mA

40

200

200

pF

10

MHz

2

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