2SA808 データシートの表示（PDF） - Inchange Semiconductor
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2SA808 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA808
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0
-80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-1.5 V
-1.0 mA
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-1.0 mA
hFE
DC Current Gain
IC= -3A; VCE= -4V
20
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
10
MHz
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -3A ,RL= 3Ω, VCC= -10V
IB1= -0.3A; IB2= 50mA
1.2
μs
1.8
μs
0.3
μs
isc Website：www.iscsemi.cn
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