A2004 データシートの表示（PDF） - Panasonic Corporation
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A2004 Datasheet PDF : 3 Pages
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Power Transistors
2SA2004
Silicon PNP epitaxial planar type
For power amplification
■ Features
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Dielectric breakdown voltage of the package: > 5 kV
• High−speed switching
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−60
V
Collector-emitter voltage (Base open) VCEO
−60
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−8
A
Peak collector current
ICP
−16
A
Collector power
TC = 25°C PC
20
W
dissipation
2.0
Junction temperature
Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Turn-on time
Storage temperature
Fall time
VCEO
ICBO
ICEO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −60 V, IE = 0
VCE = −60 V, IB = 0
VCE = −2V, IC = − 0.1 A
VCE = −2 V, IC = −5 V
IC = −5 A, IB = − 0.25 A
IC = −5 A, IB = − 0.25 A
IC = −4 A
IB1 = −400 mA, IB2 = 400 mA
VCC = −50 V
−60
V
−100 µA
−100 µA
100
230
30
−1.2
V
−1.7
V
0.2 0.5
µs
0.10 0.15 µs
0.5 1.0
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00009CED
1
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