A1110 データシートの表示（PDF） - Inchange Semiconductor

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A1110

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-100μA;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10μA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-0.3A ;IB=-30mA

VBEsat Base-emitter saturation voltage

IC=-0.3A ;IB=-30mA

hFE-1

DC current gain

IC=-150mA ; VCE=-10V

hFE-2

DC current gain

IC=-0.5A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-50mA ; VCB=-10V,

‹ hFE-1 Classifications

P

Q

R

S

65-110 90-155 130-220 185-330

Product Specification

2SA1110

MIN TYP. MAX UNIT

-120

V

-5

V

-1.0

V

-1.2

V

65

330

50

100

30

pF

200

MHz

2

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