2N930CSM データシートの表示（PDF） - Semelab - > TT Electronics plc

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2N930CSM

HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

Semelab - > TT Electronics plc  

SEME

LAB

2N930CSM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0

45

V(BR)CBO Collector – Base Breakdown Voltage IC = 10µA

IE = 0

80

V(BR)EBO Emitter – Base Breakdown Voltage

IE = 10µA

IC = 0

5

VCE = 5V

IB = 0

ICBO

Collector – Base Cut-off Current

VCB = 45V IE = 0

VCE = 45V VBE = 0

IEBO

Emitter – Base Cut-off Current

VBE = 5V

IC = 0

VCE(sat)* Collector – Emitter Saturation Voltage IC = 10mA

VBE(sat)* Base – Emitter Saturation Voltage

IB = 0.5mA

0.7

hFE

DC Current Gain

VCE = 10V IC = 500µA

150

VCE = 10V IC = 10mA*

fT

Current Gain Bandwidth Product

IC = 500µA VCE = 5V

30

f = 30MHz

Cob

Output Capacitance

IE = 0

f = 1MHz

VCB = 5V

hib

Input Impedance

hrb

Voltage Feedback Ratio

hob

Output Admittance

hfe

Small Signal Current Gain

IE = 1mA

25

VCB = 5V

f = 1kHz

VCE = 5V

IC = 0

150

f = 1MHz

NF

Noise Figure

VCE = 5V

IC = 10µA

RS = 10kΩ

f = 10Hz to 15.7kHz

* Pulse Test: tp ≤ 300µs, δ ≤ 2%

Typ.

Max. Unit

V

2

10

nA

10

10

nA

1

V

0.9

—

600

MHz

8

pF

32

Ω

600 x10-6

1 µmhos

600 —

3

dB

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 7/95

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