SA8507D データシートの表示（PDF） - Silan Microelectronics

部品番号

コンポーネント説明

一致するリスト

SA8507D

COMPANDER

Silan Microelectronics 

Silan

Semiconductors

SA8507

BLOCK DIAGRAM

CPI- 7

CPI+ 8

EPI- 16

EPI+ 15

AGIC

5

Byath

CRC

6

Rectifier

Variable

Resistor

DI

CO

FI

4

3

2

Compressor

+

Output Buffer

-

Compressor

Mute

1 FO

+

-

Byath

+

-

Summing

AMP

Limiter

Variable

Resistor

Summing

AMP

Logic

11 CMUTE

12 BYPATH

13 EMUTE

Rectifier

17

18

DO

ERC

Expandor

Mute

19

EO

Bias Circuit 20 Vcc

9 14 10

CB EB GND

ABSOLUTE MAXIMUM RATINGS(Ta=25°C )

Characteristic

Symbol

Supply Voltage

VCC

Power Dissipation

SA8507D

PD

SA8507S

Operating Temperature

TOPR

Storage Temperature

TSTG

Value

10

1000

410

-22 ~ +70

-55 ~ +150

Unit

V

mW

mW

°C

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characteristic

Symbol

Test Condition

Min Typ. Max Unit

DC ELECTRICAL CHARACTERISTICS

Operating Voltage

VCC --

--

2.4

7.0

V

Operating Current

ICC No Signal

--

4.0

6.5

mA

COMPRESSOR PART

Standard Output Voltage

VO(COMP) Vin=12.5mV

240

300

360 mVrms

Gain Deference

∆GV1(COMP) Vin=-20dB(300mV=0dB)

-0.5

0

+0.5

dB

∆GV2(COMP) Vin=-40dB

-1.0

0

+1.0

Bypath Gain Difference

∆GVB(COMP) Vout=0dB, BYPATH=GND -1.5

0

+1.5

dB

Output Distortion

THDCOMP Vin=0dB

--

0.5

1.0

%

Noise Output Voltage

VNO(COMP) Rg=620hm

--

3.0

5.5 mVrns

Mute Attenuation Radio

ATTMUTE Vin=0dB, CMUTE=GND

60

80

--

dB

Maximum Voltage

Vout --

1.15 1.35 1.50 Vrms

(To be continued)

HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD

REV: 1.1 2001-11-30

2

Share Link: