2N5339(2001) データシートの表示（PDF） - Microsemi Corporation

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2N5339
(Rev.:2001)

NPN POWER SILICON SWITCHING TRANSISTOR

Microsemi Corporation 

2N5339 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC = 0.5 Adc, VCE = 2.0 Vdc

IC = 2.0 Adc, VCE = 2.0 Vdc

IC = 5.0 Adc, VCE = 2.0 Vdc

Collector-Emitter Saturation Voltage

IC = 2.0 Adc, IB = 0.2 Adc

IC = 5.0 Adc, IB = 0.5 Adc

Base-Emitter Saturation Voltage

IC = 2.0 Adc, IB = 0.2 Adc

IC = 5.0 Adc, IB = 0.5 Adc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 0.5 Adc, VCE = 10 Vdc, f = 10 MHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Input Capacitance

VBE = 2.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

SAFE OPERATING AREA

DC Tests

TC = +250C, 1 Cycle, t ≥ 0.5 s

Test 1

VCE = 2.0 Vdc, IC = 5.0 Adc

Test 2

VCE = 5.0 Vdc, IC = 2.0 Adc

Test 3

VCE = 90 Vdc, IC = 55 mAdc

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

hfe

Cobo

Cibo

Min. Max. Unit

60

60

240

40

0.7

Vdc

1.2

1.2

Vdc

1.8

3.0

15

250

pF

1,000

pF

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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