IRFR214 データシートの表示（PDF） - Intersil
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IRFR214 Datasheet PDF : 6 Pages
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IRFR214, IRFU214
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
LD
Measured From the
Modified MOSFET
-
Drain Lead, 6mm
Symbol Showing the
(0.25in) From Package Internal Devices
to Center of Die
Inductances
D
LS
Measured From The
Source Lead, 6mm
-
LD
(0.25in) From Header to
Source Bonding Pad
G
LS
S
RθJC
-
RθJA Free Air Operation
-
4.5
-
nH
7.5
-
nH
-
5.0
oC/W
-
110 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD
Modified MOSFET
D
Pulse Source to Drain Current
(Note 2)
ISDM
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
2.2
A
-
-
8.8
A
Source to Drain Diode Voltage (Note 4)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 2.2A, VGS = 0V(Figure 10)
TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/µs
-
-
97
-
0.32
-
2.0
V
390
ns
1.3
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)
4. VDD = 50V, starting TJ = 25oC, L = 21mH, RG = 25Ω, peak IAS = 2.2A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.4
2.0
1.6
1.2
0.8
0.4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
4-385
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