1N70 データシートの表示（PDF） - Unisonic Technologies
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1N70 Datasheet PDF : 8 Pages
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1N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
1.2
A
Continuous Drain Current
ID
1.2
A
Pulsed Drain Current (Note 1)
IDM
4.8
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
Repetitive (Note 1)
EAR
50
mJ
4.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
PD
3
W
TJ
+150
℃
TOPR
-55 ~ +150
℃
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θJA
θJc
RATINGS
79
29
UNIT
℃/W
℃/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-171,A
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