MSASC25H45KR データシートの表示（PDF） - Microsemi Corporation

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MSASC25H45KR

LOW VOLTAGE DROP SCHOTTKY DIODE

Microsemi Corporation 

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

1N6815

(MSASC25H45K)

Features

• Tungsten/Platinum schottky barrier for very low VF

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap is anode: 1N6815) and reverse

polarity (strap is cathode: 1N6815R)

• TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening

i.a.w. Microsemi Internal Procedure PS11.50 available

1N6815R

(MSASC25H45KR)

45 Volts

25 Amps

LOW VOLTAGE

DROP SCHOTTKY

DIODE

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc≤ 145°C

derating, forward current, Tc≥ 145°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

1N6815

1N6815R

VRRM

VRWM

VR

IF(ave)

dIF/dT

IFSM

IRRM

Tj

Tstg

θJC

45

45

45

25

(3.3)

125

2

-55 to +150

-55 to +150

1.25

1.35

Volts

Volts

Volts

Amps

Amps/°C

Amps

Amp

°C

°C

°C/W

Datasheet# MSC1458A August, 2000

Mechanical Outline

ThinKey™2

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