1N3208 データシートの表示（PDF） - Vishay Semiconductors
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1N3208 Datasheet PDF : 4 Pages
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1N3208 Series
Vishay High Power Products
Stud-Mounted
Silicon Rectifier Diodes, 15 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
IF(AV) 180° sinusoidal conduction
Maximum peak one cycle
non-repetitive surge current
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with rated
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
VRRM applied
IFSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
Half cycle 60 Hz sine wave
condition and with VRRM
applied following surge = 0
or 5 ms rectangular pulse
Maximum I2t for fusing
Maximum I2t for individual
device fusing
t = 10 ms
t = 8.3 ms
I2t
t = 10 ms
t = 8.3 ms
With rated VRRM applied
following surge,
initial TJ = 150 °C
With VRRM = 0 following
surge, initial TJ = 150 °C
Maximum I2√t for individual
device fusing
Maximum forward voltage drop
Maximum average reverse current
Notes
(1) JEDEC registered values
(2) I2t for time tx = I2√t x √tx
I2√t (2)
VFM
IR(AV)
t = 0.1 to 10 ms, VRRM = 0 following surge
IF(AV) = 15 A (47.1 A peak), TC = 150 °C
Maximum rated IF(AV) and TC = 150 °C
VALUES
15 (1)
150 (1)
239
250 (1)
284
297
286
260
403
368
3870
1.5 (1)
10 (1)
UNITS
A
°C
A
A2s
A2√s
V
mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
TJ, TStg
Maximum internal thermal
resistance, junction to case
RthJC DC operation
Thermal resistance,
case to sink
RthCS Mounting surface, smooth, flat and greased
Mounting torque
minimum
maximum
Non-lubricated threads
Weight
Case style
Note
(1) JEDEC registered values
JEDEC
VALUES
- 65 to 175 (1)
UNITS
°C
0.65
°C/W
0.25
2.3 (20)
3.5 (30)
N·m
(lbf · in)
28.5
g
1
oz.
DO-203AB (DO-5)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93496
Revision: 24-Jun-08
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