MM4150 データシートの表示（PDF） - Rectron Semiconductor
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MM4150 Datasheet PDF : 1 Pages
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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MM4150
1N4150 mini-MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
50
V
Reverse Recovery trr
4
ns
Time
Power Dissipation
Ptot
500 mW
Forward Current
Junction Temp.
Storage Temp.
IF
200
mA
Tj -65 to 200 °C
Tstg -65 to 200 °C
Mechanical Data
Items
Materials
Package
Mini MELF
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
0.4
0.2
2 Places
m in i-MEL F
1.40
1.30
3.40
3.20
Dimensions in millimeters
Electrical Characteristics (Ta=25°C)
Ratings
Minimum Breakdown Voltage
@IR= 100uA
Peak Forward Surge Current
PW< 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100Ω
Maximum Thermal Resistance
Symbol
BV
IFsurge
VF
IR
Cj
trr
RθJA
Ratings
75
500
1.0
100
4
4
0.35
Unit
V
mA
V
nA
pF
ns
°C/mW
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com
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