2DPFS20V データシートの表示（PDF） - STMicroelectronics
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2DPFS20V
STMicroelectronics
2DPFS20V Datasheet PDF : 8 Pages
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STS2DPFS20V
TERMAL DATA
Rthj-amb
Rthj-amb
Tstg
Tj
(*)Thermal Resistance Junction-ambient MOSFET
(*)Thermal Resistance Junction-ambient SCHOTTKY
Storage Temperature Range
Maximum Lead Temperature For Soldering Purpose
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec
MAX
62.5
100
-55 to 150
150
oC/W
oC/W
oC
oC
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 12 V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 4.5 V
VGS = 2.7 V
ID = 1 A
ID = 1 A
Min.
0.6
Typ.
0.14
0.20
Max.
0.20
0.25
Unit
V
Ω
Ω
SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IR(*)
Reversed Leakage Current
TJ= 25 oC
TJ= 125 oC
VR= 30 V
VR= 30 V
0.2
mA
30
100
mA
VF(*)
Forward Voltage drop
TJ= 25 oC
TJ= 125 oC
IF= 3 A
IF= 3 A
0.51
mA
0.40
0.46
mA
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS= 15 V
ID=1 A
VDS = 15V, f = 1 MHz, VGS = 0
Min.
Typ.
4
315
87
17
Max.
Unit
S
pF
pF
pF
2/8
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