K2115 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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K2115

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2114, 2SK2115

Electrical Characteristics (Ta = 25°C)

Item

Drain to source 2SK2114

breakdown

voltage

2SK2115

Gate to source breakdown

voltage

Gate to source leak current

Zero gate

2SK2114

voltage drain

current

2SK2115

Gate to source cutoff voltage

Static drain to 2SK2114

source on state 2SK2115

resistance

Forward transfer admittance

Symbol Min

V(BR)DSS

450

500

V(BR)GSS

±30

I GSS

—

I DSS

—

VGS(off)

2.0

RDS(on)

—

—

|yfs|

2.5

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

Typ

—

—

—

—

—

1.0

1.2

4.0

640

160

20

10

25

50

30

0.95

300

Max Unit

—

V

—

V

±10 µA

250 µA

3.0 V

1.4 Ω

1.5

—

S

—

pF

—

pF

—

pF

—

ns

—

ns

—

ns

—

ns

—

V

—

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2.5 A, VGS = 10 V*1

ID = 2.5 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 2.5 A

VGS = 10 V

RL = 12 Ω

IF = 5 A, VGS = 0

IF = 5 A, VGS = 0,

diF / dt = 100 A / µs

See characteristics curve of 2SK1155, 2SK1156.

3

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